General Description
* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
* Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
* Advanced Package and Silicon combinatio.

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectificati.

* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
* Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineere.

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